Fabrication and Characteristics of Flexible Thin Film Depletion Mode Field Effect Transistor (FET) using High- K Dielectric Nano Zirconia

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dc.categoryJournal Article
dc.contributor.authorNalini, B
dc.date.accessioned2017-04-01T22:26:38Z
dc.date.available2017-04-01T22:26:38Z
dc.date.issued2013
dc.departmentPhysicsen_US
dc.description.abstractThis present work focuses on preparation of high quality Zirconia (Zr02) thin films, a high-K dielectric material by a modified sol-gel technique. The precursor was Zirconium (IV) Propoxide added in proper proportion with Iso Propyl Alcohol. Acetyl acetone in Iso Propyl Alcohol was used as a gelating agent. The prepared Zirconia was coated onto a glass plate and found that there was poor adhesion after firing (110“C for 4h). Hence a coating of Poly (Ethylene Terephthalate) was used before Z1O2 film formation on a glass plate, which results in better adhesive and uniform distribution. Since it is unable to peel off, the Zr02/PET film is prepared and is coated on the flexible ITO PET substrate. Then, a semiconducting SWNT layer is coated above the Zr02/PET layer. The terminals of Source, Drain and Gate are soldered using silver paste. Thus, the field effect transistor is fabricated using high-K dielectric Zr02 on a flexible PET substrate. Finally, the fabricated FET is characterized. Index terms - Field Effect Transistor; High-,K dielectric; ITO/PET; Sol-Gel Synthesis; Thinfilm; Zr0.en_US
dc.identifier.urihttps://ir.avinuty.ac.in/handle/avu/2554
dc.langEnglishen_US
dc.publisher.nameInternational Journal of Emerging Trends In Engineering And Developmenten_US
dc.publisher.typeInternationalen_US
dc.titleFabrication and Characteristics of Flexible Thin Film Depletion Mode Field Effect Transistor (FET) using High- K Dielectric Nano Zirconiaen_US
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