Fabrication and Characteristics of Flexible Thin Film Depletion Mode Field Effect Transistor (FET) using High- K Dielectric Nano Zirconia
No Thumbnail Available
Date
2013
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
This present work focuses on preparation of high quality Zirconia (Zr02) thin films, a high-K
dielectric material by a modified sol-gel technique. The precursor was Zirconium (IV)
Propoxide added in proper proportion with Iso Propyl Alcohol. Acetyl acetone in Iso Propyl
Alcohol was used as a gelating agent. The prepared Zirconia was coated onto a glass plate
and found that there was poor adhesion after firing (110“C for 4h). Hence a coating of Poly
(Ethylene Terephthalate) was used before Z1O2 film formation on a glass plate, which results
in better adhesive and uniform distribution. Since it is unable to peel off, the Zr02/PET film
is prepared and is coated on the flexible ITO PET substrate. Then, a semiconducting SWNT
layer is coated above the Zr02/PET layer. The terminals of Source, Drain and Gate are
soldered using silver paste. Thus, the field effect transistor is fabricated using high-K
dielectric Zr02 on a flexible PET substrate. Finally, the fabricated FET is characterized.
Index terms - Field Effect Transistor; High-,K dielectric; ITO/PET; Sol-Gel Synthesis; Thinfilm;
Zr0.